Reports and Data’s latest report indicates that the global Discrete Power Devices Market was valued at USD 21.99 billion in 2021, and it is projected to have a revenue compound annual growth rate (CAGR) of 6.4% during the forecast period. Discrete devices, such as transistors and diodes, are single semiconductors that are used in various applications to regulate voltages, reduce power consumption, and decrease heat generation. Power transistors are a vital category of discrete devices, which are in high demand, driving the growth of the discrete power device market.

The usage of electric vehicles has enhanced the performance capabilities of power semiconductors. Typically, silicon power devices have been used to control primary inverter motors, pumps, brakes, steering systems, and HVAC compressors. However, recent advancements in compound semiconductor devices, particularly Silicon Carbide (SiC), have enabled most automobile systems to operate more efficiently.

SiC technology has several features, such as low conduction and switching losses, zero recovery body diode, and high operating junction temperature, that make it ideal for automotive applications, where efficiency is critical. While the primary inverter benefits the most from SiC devices’ higher efficiency, other applications can also benefit significantly, as the technology can considerably increase a vehicle’s battery life.

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Key Players:

Infineon Technologies AG, Semiconductor Components Industries, LLC, Mitsubishi Electric Corporation, Toshiba Corporation, STMicroelectronics, Vishay Intertechnology, Inc., Fuji Electric Co., Ltd., Renesas Electronics Corporation., ROHM CO., LTD., Nexperia.

Trends:

1. Growing demand for SiC-based discrete power devices: The increasing demand for SiC-based power devices in electric vehicles and other high-power applications is one of the major trends in the discrete power device market. These devices offer several advantages over traditional silicon-based devices, such as higher efficiency, lower heat generation, and increased durability.
2. Increasing adoption of discrete power devices in renewable energy systems: With the growing focus on renewable energy systems, there has been an increase in the use of discrete power devices in these systems. These devices are used to control the flow of energy in wind turbines, solar panels, and other renewable energy systems.
3. Emergence of wide bandgap (WBG) semiconductors: WBG semiconductors, such as SiC and Gallium Nitride (GaN), offer several advantages over traditional silicon-based devices. These advantages include higher efficiency, faster switching speed, and increased power density. As a result, there has been a growing trend towards the adoption of WBG semiconductors in various applications.
4. Increasing demand for power modules: Power modules are used to control the flow of electricity in various applications, and there has been a growing demand for these modules in recent years. This trend is driven by the increasing adoption of electric vehicles and renewable energy systems, which require efficient power management.
5. Growing focus on energy efficiency: With the increasing demand for energy-efficient solutions, there has been a growing focus on the development of power devices that offer higher efficiency and lower power consumption.

Driven Key Factors Discrete Power Device Market:

Firstly, the demand for discrete power devices is rising due to the increasing use of power transistors in various applications. These devices help to control voltages, reduce power consumption, and minimize heat generation. Secondly, the adoption of electric vehicles has led to improved performance capabilities of power semiconductors, which has increased the demand for discrete power devices. Thirdly, traditional silicon power devices have been used to control primary inverter motors, pumps, brakes, steering systems, and HVAC compressors in vehicles. However, recent advancements in compound semiconductor devices, such as SiC, have made systems in automobiles more efficient, leading to a higher demand for discrete power devices. The desirable characteristics of SiC, including low conduction and switching losses, zero recovery body diode, and high operating junction temperature, make it an ideal choice for automotive applications that require high efficiency. Finally, the use of SiC technology can considerably increase a vehicle’s battery life, which is crucial for electric vehicles, further driving the demand for discrete power devices.

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